Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -15.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 150000 mW
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 400 @10A, 5V
Technical parameters/Maximum current amplification factor (hFE): 15000
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-218-3
External dimensions/packaging: TO-218-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 30
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJH11019
|
Motorola | 功能相似 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150W
|
|||
|
MJH11019
|
New Jersey Semiconductor | 功能相似 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150W
|
|||
MJH11019
|
ON Semiconductor | 功能相似 | TO-218-3 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150W
|
||
MJH11019G
|
ON Semiconductor | 类似代替 | TO-247-3 |
ON SEMICONDUCTOR MJH11019G. 双极性晶体管, PNP, -200V
|
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