Technical parameters/frequency: 100 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PA1576Q,115
|
NXP | 类似代替 | SOT-323-3 |
TRANS PNP 50V 0.15A SOT323
|
||
2PA1576Q,135
|
NXP | 完全替代 | SOT-323-3 |
SC-70 PNP 50V 0.15A
|
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