Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80
Technical parameters/Maximum current amplification factor (hFE): 80 @5mA, 10V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 385 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-88-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-88-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5113DW1T1
|
Leshan Radio | 功能相似 |
Dual Bias Resistor Transistors
|
|||
MUN5113DW1T1
|
ON Semiconductor | 功能相似 | SC-88-6 |
Dual Bias Resistor Transistors
|
||
MUN5113DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5113DW1T1G 单晶体管 双极, 双PNP, 50 V, 250 mW, 100 mA, 80 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review