Technical parameters/rated voltage (DC): 35.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/breakdown voltage: 35.0 V|35 V
Technical parameters/drain source resistance: 50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 35.0 V
Technical parameters/breakdown voltage of gate source: 35 V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Calogic | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
|
|
Vishay Siliconix | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112
|
ON Semiconductor | 类似代替 | TO-92-3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112
|
VISHAY | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112
|
ETC1 | 类似代替 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
|||
J112
|
Vishay Semiconductor | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112RL1
|
ON Semiconductor | 类似代替 | TO-226-3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
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