Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 5.00 A
Technical parameters/forward voltage: 990mV @5A
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward current: 10 A
Technical parameters/forward voltage (Max): 990mV @5A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR MURD620CTT4G 快速/超快二极管, 双共阴极, 200 V, 6 A, 1.13 V, 35 ns, 50 A
|
|||
MURD620CTT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MURD620CTT4G 快速/超快二极管, 双共阴极, 200 V, 6 A, 1.13 V, 35 ns, 50 A
|
||
STTH1002CB-TR
|
ST Microelectronics | 类似代替 | TO-252-3 |
高效率超快二极管 HIGH EFFICIENCY ULTRAFAST DIODE
|
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