Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 3.00 A
Technical parameters/output current: ≤3.00 A
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 800 mV
Technical parameters/polarity: Standard
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/forward voltage (Max): 800 mV
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/length: 7.11 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.42 mm
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SS3H10-E3/9AT
|
Vishay Semiconductor | 类似代替 | DO-214AB |
Diode Schottky 100V 3A 2Pin SMC T/R
|
||
SS3H10/57T
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN
|
||
SS3H10HE3/57T
|
Vishay Semiconductor | 类似代替 | DO-214AB |
DIODE SCHOTTKY 100V 3A DO214AB
|
||
SS3H10HE3/57T
|
VISHAY | 类似代替 | SMC-214 |
DIODE SCHOTTKY 100V 3A DO214AB
|
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