Technical parameters/working voltage: 36 V
Technical parameters/capacitors: 80 pF
Technical parameters/breakdown voltage: 40 V
Technical parameters/clamp voltage: 76.8 V
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 40 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.35 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CDNBS08-T05C
|
Bourns J.W. Miller | 类似代替 | SOIC-8 |
CDNBS08 - T03 〜 T36C - TVS二极管阵列系列 CDNBS08-T03~T36C - TVS Diode Array Series
|
||
CDNBS08-T12C
|
Bourns J.W. Miller | 类似代替 | SOIC-8 |
CDNBS08 - T03 〜 T36C - TVS二极管阵列系列 CDNBS08-T03~T36C - TVS Diode Array Series
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review