Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): -250 V
Technical parameters/rated current: -16.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/maximum allowable collector current: 16A
Technical parameters/minimum current amplification factor (hFE): 25 @8A, 5V
Technical parameters/Maximum current amplification factor (hFE): 100
Technical parameters/rated power (Max): 200 W
Technical parameters/DC current gain (hFE): 8
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/length: 20.3 mm
External dimensions/width: 5.3 mm
External dimensions/height: 26.4 mm
External dimensions/packaging: TO-264-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJL21193G
|
ON Semiconductor | 类似代替 | TO-264-3 |
ON SEMICONDUCTOR MJL21193G 单晶体管 双极, 音频, PNP, 250 V, 4 MHz, 200 W, 16 A, 75 hFE
|
||
MJL21195G
|
ON Semiconductor | 类似代替 | TO-264-3 |
ON SEMICONDUCTOR MJL21195G 单晶体管 双极, PNP, -250 V, 4 MHz, 200 W, -16 A, 8 hFE 新
|
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