Technical parameters/forward voltage: 570mV @10A
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 150 A
Technical parameters/forward voltage (Max): 570mV @10A
Technical parameters/forward current (Max): 10 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/length: 10.26 mm
External dimensions/width: 4.83 mm
External dimensions/height: 15.24 mm
External dimensions/packaging: TO-220-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
104559
|
ERNI Electronics | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-59,
|
|||
MBR10H45-E3/45
|
Vishay Semiconductor | 类似代替 | TO-220-2 |
肖特基势垒整流器 Schottky Barrier Rectifier
|
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