Technical parameters/power supply voltage (DC): 30.0 V
Technical parameters/rated current: 500 mA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output voltage: 50 V
Technical parameters/output current: 500 mA
Technical parameters/number of pins: 16
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 1000 @350mA, 2V
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/input voltage: 30 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: PDIP-16
External dimensions/length: 10 mm
External dimensions/width: 6.85 mm
External dimensions/height: 3.43 mm
External dimensions/packaging: PDIP-16
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC1413BDG
|
ON Semiconductor | 类似代替 | SOIC-16 |
ON SEMICONDUCTOR MC1413BDG 双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
|
||
MC1413DG
|
ON Semiconductor | 类似代替 | SOIC-16 |
ON SEMICONDUCTOR MC1413DG 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
|
||
MC1413PG
|
ON Semiconductor | 完全替代 | PDIP-16 |
ON SEMICONDUCTOR MC1413PG 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
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