Technical parameters/frequency: 200 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR16,215
|
NXP | 类似代替 | SOT-23-3 |
NXP BSR16,215 单晶体管 双极, PNP, -60 V, 200 MHz, 250 mW, -600 mA, 75 hFE
|
||
|
|
Philips | 类似代替 | TO-236 |
NXP BSR16,215 单晶体管 双极, PNP, -60 V, 200 MHz, 250 mW, -600 mA, 75 hFE
|
||
MMBT2907AWT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR MMBT2907AWT1G 单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 150 mW, -600 mA, 50 hFE
|
||
PMBT2907,215
|
NXP | 类似代替 | SOT-23-3 |
PMBT2907A 系列 40 V 600 mA 表面贴装 PNP 开关 晶体管 - SOT-23-3
|
||
PMBT2907A
|
Philips | 类似代替 | SOT-23 |
PMBT2907A
|
||
PMBT2907A
|
NXP | 类似代替 | TO-236 |
PMBT2907A
|
||
PMBT2907A,235
|
NXP | 完全替代 | SOT-23-3 |
TO-236AB PNP 60V 0.6A
|
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