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Technical parameters/power supply current: 11.5 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 2.3 W
Technical parameters/common mode rejection ratio: 86 dB
Technical parameters/Input compensation drift: 2.50 µV/K
Technical parameters/bandwidth: 210 MHz
Technical parameters/conversion rate: 1.00 kV/μs
Technical parameters/gain bandwidth product: 210 MHz
Technical parameters/input compensation voltage: 0.5 mV
Technical parameters/input bias current: 0.1 nA
Technical parameters/available channels: S
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 325 MHz
Technical parameters/gain bandwidth: 210 MHz
Technical parameters/dissipated power (Max): 2300 mW
Technical parameters/Common Mode Rejection Ratio (Min): 86 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 6.2 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
THS4631DE4
|
TI | 类似代替 | SOIC-8 |
高速 FET 输入运算放大器 8-SOIC -40 to 85
|
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