Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 50.0 A
Technical parameters/number of pins: 2
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 50A
Technical parameters/minimum current amplification factor (hFE): 1000 @25A, 5V
Technical parameters/Maximum current amplification factor (hFE): 18000
Technical parameters/rated power (Max): 300 W
Technical parameters/DC current gain (hFE): 18
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/width: 26.67 mm
External dimensions/packaging: TO-204-2
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJ11030G
|
ON Semiconductor | 功能相似 | TO-204-2 |
高电流互补硅功率晶体管 High-Current Complementary Silicon Power Transistors
|
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