Technical parameters/frequency: 13 MHz
Technical parameters/rated voltage (DC): 450 V
Technical parameters/rated current: 8.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 125 W
Technical parameters/gain bandwidth product: 13 MHz
Technical parameters/breakdown voltage (collector emitter): 450 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 14 @1A, 5V
Technical parameters/rated power (Max): 125 W
Technical parameters/DC current gain (hFE): 34
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.83 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUT12AI,127
|
NXP | 功能相似 | TO-220-3 |
TO-220AB NPN 450V 8A
|
||
MJE18008
|
ON Semiconductor | 完全替代 | TO-220-3 |
功率晶体管 POWER TRANSISTOR
|
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