Technical parameters/power supply current: 350 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/common mode rejection ratio: 97 dB
Technical parameters/Input compensation drift: 400 nV/K
Technical parameters/bandwidth: 1 MHz
Technical parameters/conversion rate: 400 mV/μs
Technical parameters/gain bandwidth product: 1 MHz
Technical parameters/input compensation voltage: 60 µV
Technical parameters/input bias current: 15 nA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/gain bandwidth: 1 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 97 dB
Technical parameters/power supply voltage: 4V ~ 44V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: signal processing
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LT1013CP
|
TI | 完全替代 | PDIP-8 |
TEXAS INSTRUMENTS LT1013CP 运算放大器, 双路, 1 MHz, 2个放大器, 0.4 V/µs, ± 2V 至 ± 18V, DIP, 8 引脚
|
||
LT1013DD
|
National Semiconductor | 类似代替 |
TEXAS INSTRUMENTS LT1013DD 双运算放大器
|
|||
LT1013DDR
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LT1013DDR 芯片, 精密运算放大器, 2路
|
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