Technical parameters/rated voltage (DC): 4.00 V
Technical parameters/rated current: 90.0 mA
Technical parameters/output current: ≤1.00 A
Technical parameters/breakdown voltage: 4.00 V
Technical parameters/load current: 1 mA
Technical parameters/forward voltage: 250 mV
Technical parameters/dissipated power: 75 mW
Technical parameters/resistance: 14.0 Ω
Technical parameters/forward voltage (Max): 350 mV
Technical parameters/forward current (Max): 10 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 75 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.13 mm
External dimensions/width: 1.5 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
AVAGO Technologies | 功能相似 | Surface Mount |
SILICON, X-KU BAND, MIXER DIODE
|
||
HSMS-8202-TR1
|
Broadcom | 完全替代 | SOT-23-3 |
Diode RF Mixer Schottky 4V 75mW 3Pin SOT-23 T/R
|
||
|
|
Agilent | 类似代替 |
BROADCOM LIMITED HSMS-8202-TR1G 二极管, 射频肖特基, 双系列, 4 V, 5 mA, 350 mV, 0.26 pF, SOT-23
|
|||
HSMS-8202-TR2G
|
Broadcom | 完全替代 | SOT-23-3 |
Diode RF Mixer Schottky 4V 75mW 3Pin SOT-23 T/R
|
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