Technical parameters/power supply voltage (DC): 2.70V (min)
Technical parameters/power supply current: 60 mA
Technical parameters/number of pins: 56
Technical parameters/digits: 16
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 64000000 B
Technical parameters/access time (Max): 100 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 56
Encapsulation parameters/Encapsulation: TSOP-56
External dimensions/packaging: TSOP-56
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Embedded Design & Development, Embedded Design and Development
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
AMD | 完全替代 |
Spansion ### 快闪存储器 闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。
|
|||
S29GL512S10TFI010
|
Cypress Semiconductor | 完全替代 | TSOP-56 |
Spansion ### 快闪存储器 闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。
|
||
S29GL512S10TFI020
|
Spansion | 完全替代 | TSOP-56 |
S29GL512S10TFI020 托盘
|
||
S29GL512S11TFI020
|
Spansion | 类似代替 | TSOP-56 |
闪存, 并行NOR, 512 Mbit, 32M x 16位, 并行, TSOP, 56 引脚
|
||
S29GL512S11TFI020
|
Cypress Semiconductor | 类似代替 | TSOP-56 |
闪存, 并行NOR, 512 Mbit, 32M x 16位, 并行, TSOP, 56 引脚
|
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