Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 149 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 41A
Technical parameters/rise time: 67 ns
Technical parameters/Input capacitance (Ciss): 2535pF @25V(Vds)
Technical parameters/rated power (Max): 149 W
Technical parameters/descent time: 35 ns
Technical parameters/dissipated power (Max): 149W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
55654-1
|
TE Connectivity | 功能相似 |
TRANSISTOR 41 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
|
|||
BUK7535-100A
|
NXP | 类似代替 | SOT-78 |
的TrenchMOS标准水平FET TrenchMOS standard level FET
|
||
BUK7535-100A,127
|
NXP | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 41A TO220AB
|
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