Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 12.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 100 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 15 @5A, 5V
Technical parameters/rated power (Max): 100 W
Technical parameters/DC current gain (hFE): 8
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 100000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 9.9 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJP13009H2TU
|
Fairchild | 类似代替 | TO-220-3 |
ON Semiconductor FJP13009H2TU , NPN 晶体管, 12 A, Vce=400 V, HFE:6, 3引脚 TO-220封装
|
||
FJP13009TU
|
Rochester | 类似代替 | TO-220 |
FAIRCHILD SEMICONDUCTOR FJP13009TU 单晶体管 双极, NPN, 400 V, 4 MHz, 100 W, 12 A, 8 hFE
|
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