Technical parameters/breakdown voltage: 86.1 V|77.9 V
Technical parameters/number of circuits: 1
Technical parameters/clamp voltage: 113 V
Technical parameters/test current: 1 mA
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 77.9 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201-2
External dimensions/length: 9.5 mm
External dimensions/packaging: DO-201-2
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KE82C
|
Taiwan Semiconductor | 功能相似 | DO-201 |
Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1Element, Silicon, DO-201AE, PLASTIC PACKAGE-2
|
||
1.5KE82C
|
Won-Top Electronics | 功能相似 | DO-214AE |
Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1Element, Silicon, DO-201AE, PLASTIC PACKAGE-2
|
||
1.5KE82C
|
Semtech Corporation | 功能相似 |
Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1Element, Silicon, DO-201AE, PLASTIC PACKAGE-2
|
|||
1.5KE82C
|
Panjit | 功能相似 | DO-201AE |
Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1Element, Silicon, DO-201AE, PLASTIC PACKAGE-2
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review