Technical parameters/clamp voltage: 18.2 V
Technical parameters/Maximum reverse voltage (Vrrm): 13V
Technical parameters/maximum reverse breakdown voltage: 12.4 V
Technical parameters/peak pulse power: 1500 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/packaging: DO-214AB
Other/Minimum Packaging: 850
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5SMC13CA-E3/57T
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin SMC T/R
|
||
1.5SMC13CA-E3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin SMC T/R
|
||
1.5SMC13CA-E3/9AT
|
VISHAY | 完全替代 | DO-214AB |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin SMC T/R
|
||
1.5SMC13CAHE3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin SMC T/R
|
||
1.5SMC13CAHE3/9AT
|
VISHAY | 完全替代 | DO-214AB |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin SMC T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review