Technical parameters/power supply voltage (DC): 1.80V (min)
Technical parameters/output current: ≤30 mA
Technical parameters/power supply current: 60 µA
Technical parameters/number of circuits: 1
Technical parameters/Input compensation drift: 1.50 µV/K
Technical parameters/bandwidth: 730 kHz
Technical parameters/conversion rate: 250 mV/μs
Technical parameters/gain bandwidth product: 750 kHz
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 0.73 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 72 dB
Technical parameters/power supply voltage: 1.8V ~ 6V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TDFN-8
External dimensions/length: 2 mm
External dimensions/width: 3 mm
External dimensions/height: 0.73 mm
External dimensions/packaging: TDFN-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MCP6051T-E/MNY
|
Microchip | 类似代替 | TDFN-8 |
1.8 V 300 kHz 运算放大器 扩展温度 封装类型：8 TDFN 2x3x0.8 mm
|
||
MCP6V01-E/SN
|
Micrel | 类似代替 | SOIC-8 |
MCP6V01/02/03 运算放大器 ### 运算放大器，Microchip
|
||
MCP6V01-E/SN
|
Microchip | 类似代替 | SOIC-8 |
MCP6V01/02/03 运算放大器 ### 运算放大器，Microchip
|
||
MCP6V03-E/SN
|
Microchip | 类似代替 | SOIC-8 |
MICROCHIP MCP6V03-E/SN 运算放大器, 单路, AEC-Q100, 1.3 MHz, 1个放大器, 0.5 V/µs, 1.8V 至 5.5V, SOIC, 8 引脚
|
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