Technical parameters/working voltage: 17.1 V
Technical parameters/breakdown voltage: 19 V
Technical parameters/dissipated power: 6.5 W
Technical parameters/clamp voltage: 27.7 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 19 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201-2
External dimensions/packaging: DO-201-2
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KE20AG
|
ON Semiconductor | 完全替代 | 41A-04 |
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
|
||
1N6278AG
|
Littelfuse | 完全替代 | DO-201AD |
ON SEMICONDUCTOR 1N6278AG 单管二极管 齐纳, 5 W, 轴向引线, 2 引脚, 175 °C
|
||
1N6278AG
|
ON Semiconductor | 完全替代 | 41A-04 |
ON SEMICONDUCTOR 1N6278AG 单管二极管 齐纳, 5 W, 轴向引线, 2 引脚, 175 °C
|
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