Technical parameters/clamp voltage: 18.2 V
Technical parameters/Maximum reverse voltage (Vrrm): 11.1V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 12.4 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-201AA
External dimensions/packaging: DO-201AA
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5CE13A TR
|
Central Semiconductor | 类似代替 | DO-201AA |
Diode TVS Single Uni-Dir 11.1V 1.5kW 2Pin DO-201 T/R
|
||
1.5KE13ARL4G
|
ON Semiconductor | 功能相似 | 41A-04 |
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
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