Technical parameters/breakdown voltage: 116 V
Technical parameters/clamp voltage: 152 V
Technical parameters/test current: 1 mA
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 105 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AE
External dimensions/length: 9.5 mm
External dimensions/packaging: DO-201AE
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KE110CA-B
|
Diodes | 功能相似 | DO-201-2 |
瞬态电压抑制二极管 Transient Voltage Suppression Diodes
|
||
1.5KE110CA-B
|
Littelfuse | 功能相似 | DO-201AA |
瞬态电压抑制二极管 Transient Voltage Suppression Diodes
|
||
1.5KE110CA-BP
|
Micro Commercial Components | 功能相似 | DO-201AE |
DO-201AE 94V 1500W
|
||
1.5KE110CA-E3/54
|
Vishay Semiconductor | 功能相似 | DO-201AA |
TRANSZORB® 瞬态电压抑制器轴向双向 1500W,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
1.5KE110CA-E3/54
|
VISHAY | 功能相似 | DO-201 |
TRANSZORB® 瞬态电压抑制器轴向双向 1500W,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review