Technical parameters/working voltage: 11.1 V
Technical parameters/breakdown voltage: 12.4 V
Technical parameters/dissipated power: 1.5 kW
Technical parameters/clamp voltage: 18.2 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 12.4 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201-2
External dimensions/packaging: DO-201-2
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KE13CA-E3/73
|
Vishay Semiconductor | 类似代替 | DO-201AA |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin Case 1.5KE Ammo
|
||
1.5KE13CA-E3/73
|
VISHAY | 类似代替 | DO-201 |
Diode TVS Single Bi-Dir 11.1V 1.5kW 2Pin Case 1.5KE Ammo
|
||
1.5KE13CAHE3_A/C
|
Vishay Semiconductor | 类似代替 | DO-201AA |
TVS DIODE 11.1VWM 18.2VC 1.5KE
|
||
1.5KE13CAHE3_A/D
|
Vishay Semiconductor | 类似代替 | DO-201AA |
TVS DIODE 11.1VWM 18.2VC 1.5KE
|
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