Technical parameters/frequency: 250 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 20 @0.1mA, 1V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Consumer Electronics, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2222ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE
|
||
MMBT4401LT1G
|
Fairchild | 功能相似 |
ON SEMICONDUCTOR MMBT4401LT1G 单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
|
|||
MMBT4401LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4401LT1G 单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
|
||
PMBT4401,235
|
Nexperia | 完全替代 | SOT-23-3 |
TO-236AB NPN 40V 0.6A
|
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