Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 200 @500mA, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: MPT-3
External dimensions/packaging: MPT-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: PB free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SCR513PT100
|
ROHM Semiconductor | 类似代替 | MPT-3 |
2SCR513PT100 编带
|
||
2SCR533PT100
|
ROHM Semiconductor | 类似代替 | MPT-3 |
NPN 50V 3.0A中功率晶体管 NPN 3.0A 50V Middle Power Transistor
|
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