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Model 2N5089
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN Gen Pur SS
Product QR code
Packaging TO-226-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0.41  yuan 0.41yuan
20+:
$ 0.5508
50+:
$ 0.5100
100+:
$ 0.4896
300+:
$ 0.4733
500+:
$ 0.4610
1000+:
$ 0.4529
5000+:
$ 0.4447
10000+:
$ 0.4366
Quantity
20+
50+
100+
300+
500+
Price
$0.5508
$0.5100
$0.4896
$0.4733
$0.4610
Price $ 0.5508 $ 0.5100 $ 0.4896 $ 0.4733 $ 0.4610
Start batch production 20+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3024) Minimum order quantity(20)
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Technical parameters/dissipated power: 625 mW

Technical parameters/breakdown voltage (collector emitter): 25 V

Technical parameters/minimum current amplification factor (hFE): 400 @10mA, 5V

Technical parameters/Maximum current amplification factor (hFE): 400

Technical parameters/rated power (Max): 625 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 625 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/length: 5.21 mm

External dimensions/width: 4.19 mm

External dimensions/height: 5.33 mm

External dimensions/packaging: TO-226-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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