Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 400 @10mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX38C
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Diodes | 功能相似 | TO-92-3 |
BCX38C 编带
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BCX38C
|
Zetex | 功能相似 |
BCX38C 编带
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LGE | 功能相似 | SOT-23 |
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MMBT3906LT1
|
Infineon | 功能相似 | SOT-23 |
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SynSemi | 功能相似 |
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MMBT3906LT1G
|
Rochester | 功能相似 | SOT-23 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
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MMBT3906LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
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ZTX653
|
Diodes Zetex | 功能相似 | E-Line |
ZTX653 系列 NPN 2 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
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ZTX653
|
Zetex | 功能相似 | TO-92-3 |
ZTX653 系列 NPN 2 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
|
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ZTX653
|
Diodes | 功能相似 | TO-92-3 |
ZTX653 系列 NPN 2 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
|
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