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Model GA200SA60S
Description Insulated Gate Bipolar Transistor Ultra Low VCE (on), 342 Insulated Gate Bipolar Transistor Ultra Low VCE (on), 342 A
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Brand: Vishay Semiconductor
Packaging SOT-227-4
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7432) Minimum order quantity(1)
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Technical parameters/dissipated power: 781000 mW

Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/Input capacitance (Cies): 16.25nF @30V

Technical parameters/rated power (Max): 630 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 781000 mW

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/height: 12.3 mm

External dimensions/packaging: SOT-227-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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