Technical parameters/power supply current: 10 mA
Technical parameters/number of pins: 32
Technical parameters/digits: 8
Technical parameters/access time: 55 ns
Technical parameters/memory capacity: 500000 B
Technical parameters/access time (Max): 55 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: TSOP-32
External dimensions/length: 21.05 mm
External dimensions/width: 10.26 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP-32
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: PB free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2017/01/12
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RMLV0408EGSB-4S2#AA0
|
Renesas Electronics | 类似代替 | TSOP-32 |
低功率 SRAM，RMLV 系列，Renesas Electronics RMLV 系列高性能高级静态 RAM 实现了更高的密度、低电流消耗，还提供低功率待机功耗。 单 2.7V 至 3.6V 电源 存取时间：45ns（最大值） 相等存取和循环时间 常见数据输入和输出，带三态输出 所有输入和输出均兼容 TTL 适合于电池备份操作 ### SRAM（静态随机存取存储器）
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