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Model PSMN015-110P,127
Description TO-220AB N-CH 110V 75A
Product QR code
Brand: NXP
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.08  yuan 4.08yuan
5+:
$ 5.5040
25+:
$ 5.0963
50+:
$ 4.8109
100+:
$ 4.6886
500+:
$ 4.6070
2500+:
$ 4.5051
5000+:
$ 4.4643
10000+:
$ 4.4032
Quantity
5+
25+
50+
100+
500+
Price
$5.5040
$5.0963
$4.8109
$4.6886
$4.6070
Price $ 5.5040 $ 5.0963 $ 4.8109 $ 4.6886 $ 4.6070
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3725) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 300W (Tc)

Technical parameters/drain source voltage (Vds): 110 V

Technical parameters/Continuous drain current (Ids): 75A

Technical parameters/rise time: 65 ns

Technical parameters/Input capacitance (Ciss): 4900pF @25V(Vds)

Technical parameters/rated power (Max): 300 W

Technical parameters/descent time: 50 ns

Technical parameters/dissipated power (Max): 300W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PSMN015-110P PSMN015-110P NXP 完全替代 TO-220-3
N沟道的TrenchMOS SiliconMAX标准水平FET N-channel TrenchMOS SiliconMAX standard level FET
PDF
PSMN015-110P,127 PSMN015-110P,127 NXP 类似代替 TO-220-3
N沟道 VDS=110V VGS=±20V ID=75A P=300W
PDF

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