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Model 2SJ535-E
Description Silicon P Channel MOS Field Effect Transistor
Product QR code
Brand: Renesas Electronics
Packaging TO-220
Delivery time
Packaging method Tube
Standard packaging quantity 1
18.63  yuan 18.63yuan
5+:
$ 21.7924
50+:
$ 20.8611
200+:
$ 20.3396
500+:
$ 20.2092
1000+:
$ 20.0788
2500+:
$ 19.9298
5000+:
$ 19.8367
7500+:
$ 19.7436
Quantity
5+
50+
200+
500+
1000+
Price
$21.7924
$20.8611
$20.3396
$20.2092
$20.0788
Price $ 21.7924 $ 20.8611 $ 20.3396 $ 20.2092 $ 20.0788
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5080) Minimum order quantity(5)
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Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 35 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 30A

Technical parameters/rise time: 150 ns

Technical parameters/Input capacitance (Ciss): 2500pF @10V(Vds)

Technical parameters/descent time: 220 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 35000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Physical parameters/materials: Silicon

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SJ334(F) 2SJ334(F) Toshiba 功能相似 TO-220
Trans MOSFET P-CH 60V 30A 3Pin(3+Tab) TO-220NIS
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