Technical parameters/dissipated power: 1200 mW
Technical parameters/gain bandwidth product: 1 MHz
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Technical parameters/Common Mode Rejection Ratio (Min): 80 dB
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TO-99
External dimensions/packaging: TO-99
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JL101ABGA
|
TI | 完全替代 | TO-99 |
LM101AJAN运算放大器 LM101AJAN Operational Amplifiers
|
||
LM101AH/NOPB
|
National Semiconductor | 完全替代 | TO-99-8 |
TEXAS INSTRUMENTS LM101AH/NOPB 运算放大器, 单路, 80 MHz, 1个放大器, 0.5 V/µs, 10V 至 44V, TO-99, 8 引脚
|
||
LM101AH/NOPB
|
TI | 完全替代 | TO-99-8 |
TEXAS INSTRUMENTS LM101AH/NOPB 运算放大器, 单路, 80 MHz, 1个放大器, 0.5 V/µs, 10V 至 44V, TO-99, 8 引脚
|
||
LM101AHLQMLV
|
TI | 完全替代 | TO-99-8 |
LM101AQML运算放大器 LM101AQML Operational Amplifiers
|
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