Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 23.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.80 W
Technical parameters/product series: IRFB23N15D
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 23.0 A
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/descent time: 8.4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB23N15DPBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRFB23N15DPBF 晶体管, MOSFET, N沟道, 23 A, 150 V, 90 mohm, 10 V, 5.5 V
|
||
IRFB23N15DPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRFB23N15DPBF 晶体管, MOSFET, N沟道, 23 A, 150 V, 90 mohm, 10 V, 5.5 V
|
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