Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 40A
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1S40N10LESM
|
Fairchild | 功能相似 | TO-263 |
40A , 100V , 0.040欧姆,逻辑电平N沟道功率MOSFET 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
|
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