Technical parameters/forward voltage: 1.1 V
Technical parameters/reverse recovery time: 1500 ns
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/forward current (Max): 1.1 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AC
External dimensions/length: 4.6 mm
External dimensions/width: 2.83 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: DO-214AC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S1B
|
ON Semiconductor | 功能相似 | DO-214AC |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
S1B
|
EIC | 功能相似 | SMA |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
|
S1B
|
FUJI | 功能相似 |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
|||
S1B
|
Luguang Electronic | 功能相似 |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
|||
|
|
Diodes | 功能相似 | DO-214AC |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
S1B
|
Taiwan Semiconductor | 功能相似 | DO-214AC-2 |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
|
S1B
|
Multicomp | 功能相似 | DO-214AC |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
S1B
|
Diotec Semiconductor | 功能相似 | SMA |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
S1B
|
Galaxy Electrical | 功能相似 | DO-214AC |
MULTICOMP S1B 标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 1.8 µs, 30 A
|
||
|
|
Multicomp | 功能相似 | DO-214AC |
标准恢复二极管, 100 V, 1 A, 单, 1.1 V, 30 A
|
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