Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
|||
FJV3102R
|
Fairchild | 功能相似 | SOT-23 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
FJV3102RMTF
|
Fairchild | 功能相似 | SOT-23-3 |
集成电路
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review