Technical parameters/polarity: NPN
Technical parameters/dissipated power: 100 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 10
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-254-3
External dimensions/packaging: TO-254-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N7370
|
Microchip | 类似代替 |
NPN达林顿大功率硅晶体管 NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
|
|||
JANTX2N7370
|
Microsemi | 类似代替 | TO-254-3 |
NPN达林顿大功率硅晶体管 NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
|
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