Technical parameters/breakdown voltage: 35 V|35 V
Technical parameters/drain source resistance: 30.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/leakage source breakdown voltage: -10.0 V
Technical parameters/breakdown voltage of gate source: 50.0 V
Technical parameters/Continuous drain current (Ids): 20.0 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/length: 600 in
External dimensions/width: 300 in
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Physical parameters/weight: 0.0072574784 kg
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/HTS code: 85412100959
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