Technical parameters/rated voltage (DC): 70.0 V
Technical parameters/rated current: 200 mA
Technical parameters/capacitors: 2.00 pF
Technical parameters/dissipated power: 225 mW
Technical parameters/reverse recovery time: 6 ns
Technical parameters/forward voltage (Max): 1.25V @150mA
Technical parameters/forward current (Max): 0.2 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Steering Logic, Polarity Reversal Protection, Inductive Load Protection, ESD Protection, Data Line Protection
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAW56LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BAW56LT1G.. 二极管 小信号, 双共阳极, 70 V, 200 mA, 1.25 V, 6 ns, 500 mA
|
||
BAW56LT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BAW56LT3G 二极管 小信号, AEC-Q101, 双共阳极, 70 V, 200 mA, 1.25 kV, 6 ns, 4 A 新
|
||
BAW56TT1G
|
ON Semiconductor | 类似代替 | SC-75-3 |
双开关二极管 Dual Switching Diode
|
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