Technical parameters/forward voltage: 750 mV
Technical parameters/drain source resistance: 36.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 12.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerPAK
External dimensions/packaging: PowerPAK
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7414DN-T1-E3
|
Vishay Intertechnology | 功能相似 | 1212-8 |
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.021Ω; ID 5.6A; PowerPAK 1212-8; PD 1.5W
|
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