Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 60V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 40V
Other/Collector Continuous Output Current (IC): 600mA/0.6A
Other/Cut off Frequency fTTransmission Frequency (fT): 250MHz
Other/DC current gain hFEDC Current Gain (hFE): 100~300
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 750mV/0.75V
Other/dissipated power PcPower Dissipation: 350mW/0.35W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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American Microsemiconductor | 功能相似 |
NPN 晶体管,40V 至 50V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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MMBT4400
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Fairchild | 功能相似 | SOT-23-3 |
NPN 晶体管,40V 至 50V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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MMST2222
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ROHM Semiconductor | 功能相似 | SOT-23 |
MMST2222 NPN三极管 75V 600mA/0.6a 300Mhz 35~100 0.3V~1V SOT-23/SC-59/SMT3 marking/标记 R1P 通用放大器和开关
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