Technical parameters/output current: ≤20 mA
Technical parameters/number of channels: 1
Technical parameters/Input compensation drift: 2.00 µV/K
Technical parameters/conversion rate: 500 mV/μs
Technical parameters/gain bandwidth product: 1.2 MHz
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 1.2 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 85 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC33171DR2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
MC33171/2/4,MCV33172,低功率,单电源 3 V 至 44 V,运算放大器,ON Semiconductor MC33171(单路),MC33172(双路),MC33174(四路) 低电源电流:每个放大器 180 μA 宽带宽:1.8 MHz 高转换速率:2.1 V/μs 低输入偏置电压:2 mV NCV33172 适用于汽车应用;符合 AEC-Q100 ### 运算放大器,ON Semiconductor
|
||
MC33171DT
|
ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS MC33171DT 运算放大器, 单路, 2.1 MHz, 1个放大器, 2 V/µs, ± 2V 至 ± 22V, SOIC, 8 引脚
|
||
TLE2021QDRG4Q1
|
TI | 完全替代 | SOIC-8 |
神剑高速低功耗精密运算放大器 EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS
|
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