Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1.2A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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GMR Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
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KEC | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
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DAYA | 功能相似 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
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MAKO SEMICONDUCTOR COLIMITED | 功能相似 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
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Diodes | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
|
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MMBTA14
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
|
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MMBTA14
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBTA14 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 20000 hFE
|
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SMBTA14
|
Siemens Semiconductor | 功能相似 |
NPN硅达林顿晶体管 NPN Silicon Darlington Transistors
|
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SMBTA14E6327
|
Infineon | 功能相似 | SOT-23 |
SOT-23 NPN 30V 0.3A
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