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Model 2SK1056-E
Description Silicon N-channel MOS FET
Product QR code
Brand: Renesas Electronics
Packaging TO-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1199) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 120 V

Technical parameters/Continuous drain current (Ids): 7A

Technical parameters/Input capacitance (Ciss): 600pF @10V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 100000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3

External dimensions/packaging: TO-3

Physical parameters/materials: Silicon

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SK1056 2SK1056 HITACHI 功能相似 TO-3
硅N沟道MOS FET Silicon N Channel MOS FET
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