Technical parameters/polarity: NPN
Technical parameters/dissipated power: 233 W
Technical parameters/output power: 150 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/gain: 15 dB
Technical parameters/minimum current amplification factor (hFE): 10 @5A, 5V
Technical parameters/rated power (Max): 150 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: 211-11
External dimensions/packaging: 211-11
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 |
RF POWER TRANSISTOR NPN SILICON
|
|||
MRF429
|
Advanced Semiconductor | 功能相似 |
RF POWER TRANSISTOR NPN SILICON
|
|||
MRF429
|
M/A-Com | 功能相似 | 211-11 |
RF POWER TRANSISTOR NPN SILICON
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review