Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 10 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 140
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Active
Other/Minimum Packaging: 1000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1620
|
ON Semiconductor | 功能相似 | SOT-89 |
2SD1620 NPN三极管 30V 3A 200MHz 140~210 300mV/0.3V SOT-89/PCP marking/标记 DC
|
||
|
|
ON Semiconductor | 功能相似 | SOT-89 |
双极晶体管-50V , -3A ,低VCEsat晶体管, PNP , NPN单PCP Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP
|
||
2SD1624S
|
Sanyo Semiconductor | 功能相似 | SOT-89 |
2SD1624S NPN三极管 60V 3A 150MHz 140~280 190mV/0.19V SOT-89/PCP marking/标记 DGS 高电流开关放大
|
||
2SD1624S
|
ON Semiconductor | 功能相似 |
2SD1624S NPN三极管 60V 3A 150MHz 140~280 190mV/0.19V SOT-89/PCP marking/标记 DGS 高电流开关放大
|
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