Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.2 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Good-Ark Electronics | 类似代替 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Semelab | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Sensitron Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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ON Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Panjit | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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BZX55C6V2
|
Kingtronics | 类似代替 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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BZX55C6V2
|
Rectron | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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BZX55C6V2
|
XKST | 类似代替 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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BZX55C6V2
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ST Microelectronics | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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