Technical parameters/drain source resistance: 100 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.20 A
Encapsulation parameters/Encapsulation: SOT-163
External dimensions/packaging: SOT-163
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